发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 具有大阻塞电压的半导体器件及其制造方法
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申请号： US12834764申请日： 2010-07-12
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公开(公告)号： US20110018004A1公开(公告)日： 2011-01-27
- 发明人: Haruka SHIMIZU , Natsuki Yokoyama
- 申请人： Haruka SHIMIZU , Natsuki Yokoyama
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 优先权： JPJP2009-169693 20090721
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/24 ; H01L21/336 ; H01L29/201
摘要：
There is no effective method for fabricating a semiconductor power device containing UMOSFET possessing large channel mobility and whose threshold voltage can be lowered with no loss in blocking voltage. A semiconductor device with large blocking voltage is provided utilizing silicon carbide trench MOSFET possessing both narrow regions where the p body concentration is low, and wide regions where the p body concentration is high.
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