Invention Application
US20110018006A1 MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE
审中-公开
具有发射层的微尺寸半导体发光二极管,包括硅纳米管,半导体发光二极管阵列,包括微尺寸半导体发光二极管,以及制造微尺寸半导体发光二极管的方法
- Patent Title: MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE
- Patent Title (中): 具有发射层的微尺寸半导体发光二极管,包括硅纳米管,半导体发光二极管阵列,包括微尺寸半导体发光二极管,以及制造微尺寸半导体发光二极管的方法
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Application No.: US12514577Application Date: 2007-10-31
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Publication No.: US20110018006A1Publication Date: 2011-01-27
- Inventor: Chul Huh , Jaeheon Shin , Kyung-Hyun Kim , JongCheol Hong , Gun-Yong Sung
- Applicant: Chul Huh , Jaeheon Shin , Kyung-Hyun Kim , JongCheol Hong , Gun-Yong Sung
- Applicant Address: KR Daejeon-city
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon-city
- Priority: KR10-2006-0111874 20061113; KR10-2007-0036581 20070413
- International Application: PCT/KR07/05469 WO 20071031
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L33/42 ; H01L33/00

Abstract:
A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
Information query
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