发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE
- 专利标题（中）： 具有浮动半导体区域的半导体器件
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申请号： US12506844申请日： 2009-07-21
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公开(公告)号： US20110018029A1公开(公告)日： 2011-01-27
- 发明人: Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
- 申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
公开/授权文献
- US08264033B2 Semiconductor device having a floating semiconductor zone 公开/授权日：2012-09-11
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