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公开(公告)号：US08482062B2
公开(公告)日：2013-07-09
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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公开(公告)号：US20130001640A1
公开(公告)日：2013-01-03
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/739
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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公开(公告)号：US20110018029A1
公开(公告)日：2011-01-27
申请号：US12506844
申请日：2009-07-21
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/739
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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公开(公告)号：US08264033B2
公开(公告)日：2012-09-11
申请号：US12506844
申请日：2009-07-21
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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公开(公告)号：US08829562B2
公开(公告)日：2014-09-09
申请号：US13556335
申请日：2012-07-24
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/66 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.
摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。
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公开(公告)号：US20140027812A1
公开(公告)日：2014-01-30
申请号：US13556335
申请日：2012-07-24
IPC分类号： H01L29/78 , H01L29/739
CPC分类号： H01L29/66 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.
摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。
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公开(公告)号：US08860025B2
公开(公告)日：2014-10-14
申请号：US13227206
申请日：2011-09-07
IPC分类号： H01L29/861 , H01L21/331 , H01L29/739 , H01L29/78 , H01L29/10 , H01L29/66 , H01L29/06 , H01L29/423
CPC分类号： H01L21/02576 , H01L21/302 , H01L29/0626 , H01L29/0692 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/6609 , H01L29/66136 , H01L29/7803 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.
摘要翻译： 半导体器件包括半导体二极管。 半导体二极管包括形成在漂移区中或漂移区上的漂移区和第一导电类型的第一半导体区。 第一半导体区域经由半导体本体的第一表面电耦合到第一端子。 半导体二极管包括电耦合到第一端子的第二导电类型的沟道区，其中沟道区的底部与第一半导体区相邻。 沟道区的第一侧邻接第一半导体区。
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8.发明申请公开(公告)号：US20130056731A1
公开(公告)日：2013-03-07
申请号：US13227206
申请日：2011-09-07
IPC分类号： H01L29/861 , H01L21/331 , H01L29/739
CPC分类号： H01L21/02576 , H01L21/302 , H01L29/0626 , H01L29/0692 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/6609 , H01L29/66136 , H01L29/7803 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.
摘要翻译： 半导体器件包括半导体二极管。 半导体二极管包括形成在漂移区中或漂移区上的漂移区和第一导电类型的第一半导体区。 第一半导体区域经由半导体本体的第一表面电耦合到第一端子。 半导体二极管包括电耦合到第一端子的第二导电类型的沟道区，其中沟道区的底部与第一半导体区相邻。 沟道区的第一侧邻接第一半导体区。
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公开(公告)号：US08461648B2
公开(公告)日：2013-06-11
申请号：US11996906
申请日：2006-07-27
申请人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
发明人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
IPC分类号： H01L29/732
CPC分类号： H01L29/7803 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7802 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
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公开(公告)号：US20110215858A1
公开(公告)日：2011-09-08
申请号：US12718381
申请日：2010-03-05
IPC分类号： H03K17/0412 , H01L29/739
CPC分类号： H01L29/739 , H03K17/0412
摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.
摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。
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