发明申请
- 专利标题: THREE DIMENSIONAL INTEGRATED DEEP TRENCH DECOUPLING CAPACITORS
- 专利标题(中): 三维集成深层解压电容器
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申请号: US12509780申请日: 2009-07-27
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公开(公告)号: US20110018095A1公开(公告)日: 2011-01-27
- 发明人: Roger A. Booth, JR. , Kangguo Cheng , Ravi M. Todi , Geng Wang
- 申请人: Roger A. Booth, JR. , Kangguo Cheng , Ravi M. Todi , Geng Wang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/02
摘要:
A method of forming an integrated circuit device includes forming a plurality of deep trench decoupling capacitors on a first substrate; forming a plurality of active circuit devices on a second substrate; bonding the second substrate to the first substrate; and forming electrical connections between the deep trench capacitors and the second substrate.