发明申请
- 专利标题: MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY
- 专利标题(中): 磁阻效应元件,磁阻效应头,磁存储和磁记忆
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申请号: US12879642申请日: 2010-09-10
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公开(公告)号: US20110019312A1公开(公告)日: 2011-01-27
- 发明人: Hideaki FUKUZAWA , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人: Hideaki FUKUZAWA , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-285240 20050929
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; H01F7/00
摘要:
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.