Invention Application
- Patent Title: LOW COST HIGH DENSITY RECTIFIER MATRIX MEMORY
- Patent Title (中): 低成本高密度整流器矩阵存储器
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Application No.: US12898205Application Date: 2010-10-05
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Publication No.: US20110019455A1Publication Date: 2011-01-27
- Inventor: Daniel R. Shepard
- Applicant: Daniel R. Shepard
- Applicant Address: US MA N. Billerica
- Assignee: Contour Semiconductor, Inc.
- Current Assignee: Contour Semiconductor, Inc.
- Current Assignee Address: US MA N. Billerica
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
A high density memory device is fabricated three dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
Public/Granted literature
- US08358525B2 Low cost high density rectifier matrix memory Public/Granted day:2013-01-22
Information query
