发明申请
- 专利标题： METHOD FOR MANUFACTURING RESISTANCE CHANGE ELEMENT
- 专利标题（中）： 制造电阻变化元件的方法
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申请号： US12852230申请日： 2010-08-06
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公开(公告)号： US20110021000A1公开(公告)日： 2011-01-27
- 发明人: Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
- 申请人： Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2008-041327 20080222
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2 to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
公开/授权文献
- US07981805B2 Method for manufacturing resistance change element 公开/授权日：2011-07-19
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