发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY
- 专利标题（中）： 非易失性半导体存储器
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申请号： US12904231申请日： 2010-10-14
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公开(公告)号： US20110024827A1公开(公告)日： 2011-02-03
- 发明人: Fumitaka ARAI , Ichiro Mizushima , Makoto Mizukami
- 申请人： Fumitaka ARAI , Ichiro Mizushima , Makoto Mizukami
- 优先权： JP2006-346501 20061222
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/78
摘要：
A nonvolatile semiconductor memory according to an aspect of the invention comprises a semiconductor substrate which has an SOI region and an epitaxial region at its surface, a buried oxide film arranged on the semiconductor substrate in the SOI region, an SOI layer arranged on the buried oxide film, a plurality of memory cells arranged on the SOI layer, an epitaxial layer arranged in the epitaxial region, and a select gate transistor arranged on the epitaxial layer, wherein the SOI layer is made of a microcrystalline layer.
公开/授权文献
- US08269267B2 Nonvolatile semiconductor memory 公开/授权日：2012-09-18
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