发明申请
- 专利标题: SWITCHES WITH BIAS RESISTORS FOR EVEN VOLTAGE DISTRIBUTION
- 专利标题(中): 用于电压分配的偏置电阻开关
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申请号: US12615107申请日: 2009-11-09
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公开(公告)号: US20110025408A1公开(公告)日: 2011-02-03
- 发明人: Marco Cassia , Jeremy D. Dunworth
- 申请人: Marco Cassia , Jeremy D. Dunworth
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM INCORPORATED
- 当前专利权人: QUALCOMM INCORPORATED
- 当前专利权人地址: US CA San Diego
- 主分类号: G05F3/02
- IPC分类号: G05F3/02
摘要:
Switches with connected bulk for improved switching performance and bias resistors for even voltage distribution to improve reliability are described. In an exemplary design, a switch may include a plurality of transistors coupled in a stack and at least one resistor coupled to at least one intermediate node in the stack. The transistors may have (i) a first voltage applied to a first transistor in the stack and (ii) a second voltage that is lower than the first voltage applied to bulk nodes of the transistors. The resistor(s) may maintain matching bias conditions for the transistors when they are turned off. In one exemplary design, one resistor may be coupled between the source and drain of each transistor. In another exemplary design, one resistor may be coupled between each intermediate node and the first voltage. The resistor(s) may maintain the source of each transistor at the first voltage.
公开/授权文献
- US08395435B2 Switches with bias resistors for even voltage distribution 公开/授权日:2013-03-12
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