A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth.