发明申请
- 专利标题： SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE
- 专利标题（中）： 硝酸盐选择性沉积氮离子
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申请号： US12907186申请日： 2010-10-19
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公开(公告)号： US20110034000A1公开(公告)日： 2011-02-10
- 发明人: Ashima B. Chakravarti , Anthony I. Chou , Toshiharu Furukawa , Steven J. Holmes , Wesley C. Natzle
- 申请人： Ashima B. Chakravarti , Anthony I. Chou , Toshiharu Furukawa , Steven J. Holmes , Wesley C. Natzle
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
公开/授权文献
- US08900961B2 Selective deposition of germanium spacers on nitride 公开/授权日：2014-12-02