发明申请
US20110042817A1 SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME 审中-公开
焊接接头结构及其接合方法

SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME
摘要:
A layer (105) of a metal having a crystal lattice different from the crystal lattice of a joining material (106) mainly containing Bi is placed on a surface (102b) of a semiconductor device (102), and a layer (104) of an element having a positive value of heat of formation of a compound with the joining material (106) is placed between the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) and the surface (102b) of the semiconductor device (102), thereby preventing the component of the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) from being diffused in the semiconductor device (102).
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