摘要:
A mounting structure includes an insulating substrate having a substrate electrode on which at least one electrode notch is provided and a resist, an electronic component having an electronic component electrode to be electrically connected to the substrate electrode, and solder paste printed on a surface of the substrate electrode. The substrate electrode has a following relation, 0
摘要:
A resin composition is provided that makes it possible to prevent low-heat resistant components from being damaged when heated in a process of mounting electronic components on a circuit board. There are also provided a method for easily repairing circuit boards that are determined to be off-specification products in the mounting process, and a method for separating and recovering useful circuit boards and/or electronic components from the circuit boards that are determined to be off-specification products in the mounting process. The resin composition comprises (A) 100 parts by weight of an epoxy resin, (B) 30 to 200 parts by weight of a thiol-based curing agent, (C) 5 to 200 parts by weight of an organic-inorganic composite insulating filler and (D) 0.5 to 20 parts by weight of an imidazole-based curing accelerator. According to the recovering method, the resin composition is softened by heating a part or whole of the circuit board in the mounting process, to a temperature in range not lower than the glass transition point of the resin composition and not higher than 110° C., and separating and recovering the electronic components from the circuit board.
摘要:
A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要:
A mounting structure includes an insulating substrate having a substrate electrode on which at least one electrode notch is provided and a resist, an electronic component having an electronic component electrode to be electrically connected to the substrate electrode, and solder paste printed on a surface of the substrate electrode. The substrate electrode has a following relation, 0
摘要:
A plurality of semiconductor elements is adjacently mounted on a substrate by a solder with a melting point of 200° C. or lower, an electronic part other than the semiconductor elements is mounted on the substrate between the adjacently mounted semiconductor elements by a solder with a melting point of 200° C. or lower, and spaces between the plurality of semiconductor elements and the substrate, spaces between the electronic part and the substrate, and spaces between the plurality of semiconductor elements and the electronic part are integrally molded with a molding resin.
摘要:
The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要:
A semiconductor component of the present invention includes a semiconductor element and a joining layer formed on one surface of the semiconductor element and consisting of a joining material containing Bi as an essential ingredient, and projecting sections are formed on a surface of the joining layer on a side opposite to a surface in contact with the semiconductor element. By joining the semiconductor component to an electrode arranged so as to face the joining layer, the generation of a void can be suppressed.
摘要:
A mounting structure is provided that can suppress flux from spreading, secure a connecting strength between a circuit board and an electronic component with underfill, and achieve a stable electrical connection between lands and terminals. The mounting structure is configured with a flat electronic component and a circuit board, and a plurality of lands provided on the undersurface of the electronic component and a plurality of terminals provided on the mounting surface of the circuit board so as to correspond to the plurality of lands are bonded with solder. The circuit board includes a means for holding flux separated from the solder in the proximity of at least one of the plurality of terminals.
摘要:
A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要:
A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop.A solder material comprises 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part (3a) of an electronic component (3) is connected to a copper-containing electrode land (1a) of a substrate (1) by using this solder material, a part (5b) having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound (5a) can be rapidly grown from the electrode land (1a) and the electrode part (3a) to form a strong blocking structure. Thus, even in a severe temperature environment, cleavage can be prevented from generating and extending, a high thermal fatigue resistance can be attained, and occurrence of connection failure can be reduced.