Invention Application
US20110043141A1 CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT
有权
用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法
- Patent Title: CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT
- Patent Title (中): 用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法
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Application No.: US12919195Application Date: 2009-02-23
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Publication No.: US20110043141A1Publication Date: 2011-02-24
- Inventor: Hyun-Tak Kim , Bong-Jun Kim , Sun-Jin Yun , Dae-Yong Kim
- Applicant: Hyun-Tak Kim , Bong-Jun Kim , Sun-Jin Yun , Dae-Yong Kim
- Applicant Address: KR Daejeon-city
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon-city
- Priority: KR10-2008-0016935 20080225; KR10-2008-0091265 20080917; KR10-2009-0002732 20090113
- International Application: PCT/KR09/00834 WO 20090223
- Main IPC: H05B37/02
- IPC: H05B37/02 ; H01L21/8222 ; H01L21/8234 ; H03K3/011
Abstract:
Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.
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