发明申请
US20110044088A1 VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL
有权
可变电阻非易失性存储器件及形成存储器单元的方法
- 专利标题： VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL
- 专利标题（中）： 可变电阻非易失性存储器件及形成存储器单元的方法
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申请号： US12743472申请日： 2009-08-20
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公开(公告)号： US20110044088A1公开(公告)日： 2011-02-24
- 发明人: Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
- 申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
- 优先权： JP2008-212256 20080820
- 国际申请： PCT/JP2009/003969 WO 20090820
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; H01L27/105 ; H01L21/02
摘要：
A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOx and MOy (where x