发明申请
- 专利标题： REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TRANSISTORS BY PERFORMING A HYDROGEN TREATMENT
- 专利标题（中）： 通过执行氢处理减少MOS晶体管中栅极电介质电荷的产生
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申请号： US12916681申请日： 2010-11-01
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公开(公告)号： US20110045665A1公开(公告)日： 2011-02-24
- 发明人: Martin Trentzsch , Thorsten Kammler , Rolf Stephan
- 申请人： Martin Trentzsch , Thorsten Kammler , Rolf Stephan
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 优先权： DE102007063270.5 20071231
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectrics may be improved, thereby reducing negative bias temperature instability effects in highly scaled P-channel transistors.
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