发明申请
US20110049466A1 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
有权
指向具有大电流和均匀电流的上行P-I-N二极管的大阵列
- 专利标题： LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
- 专利标题（中）： 指向具有大电流和均匀电流的上行P-I-N二极管的大阵列
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申请号： US12940251申请日： 2010-11-05
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公开(公告)号： US20110049466A1公开(公告)日： 2011-03-03
- 发明人: S. Brad Herner
- 申请人： S. Brad Herner
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; B82Y30/00
摘要：
A memory is provided that includes a first memory level having a plurality of memory cells. Each memory cell includes a vertically oriented p-i-n diode including a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.