Invention Application
- Patent Title: Memcapacitive Devices
- Patent Title (中): Memcapacitive设备
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Application No.: US12548124Application Date: 2009-08-26
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Publication No.: US20110051310A1Publication Date: 2011-03-03
- Inventor: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
- Applicant: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
- Main IPC: H01G7/06
- IPC: H01G7/06 ; H01G7/00

Abstract:
A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
Public/Granted literature
- US08493138B2 Memcapacitive devices Public/Granted day:2013-07-23
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