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公开(公告)号：US20110266515A1
公开(公告)日：2011-11-03
申请号：US12769557
申请日：2010-04-28
Applicant: Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
Inventor： Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
CPC classification number: H01L45/146 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/72 , G11C2213/77 , H01L27/2409
Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
Abstract translation: 忆阻开关装置可以包括形成在第一电极和第二电极之间的开关，其中开关包括忆阻层和与忆阻层直接相邻的选择层。 选择层通过施加在第一和第二电极之间的亚阈值电压的对称双极性范围阻挡电流到忆阻层。
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公开(公告)号：US09184213B2
公开(公告)日：2015-11-10
申请号：US12696524
申请日：2010-01-29
Applicant: Jianhua Yang , Dmitri Strukov , Wei Wu
Inventor： Jianhua Yang , Dmitri Strukov , Wei Wu
IPC: H01L27/105 , H01L27/24 , H01L27/118 , H01L45/00 , G11C13/00 , G11C11/419 , H01L27/115 , H01L27/112
CPC classification number: H01L27/24 , G11C11/419 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2213/52 , H01L27/11206 , H01L27/115 , H01L27/118 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148
Abstract: A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.
Abstract translation: 纳米级开关器件具有包含能够承载一种掺杂剂并在电场下传输掺杂剂的开关材料的有源区。 开关器件具有纳米级宽度的第一，第二和第三电极。 有源区设置在第一和第二电极之间。 具有非线性电压依赖性电阻的电阻修饰层设置在第二和第三电极之间。
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公开(公告)号：US20120074378A1
公开(公告)日：2012-03-29
申请号：US12889389
申请日：2010-09-23
Applicant: Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
Inventor： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
CPC classification number: H01L27/10 , B82Y10/00 , G11C13/0016 , G11C13/0069 , G11C2013/0095 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11551 , H01L27/2472 , H01L27/2481 , H01L29/86 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/146
Abstract: A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material.
Abstract translation: 提供了一种存储元件，其包括第一电极，第二电极和设置在第一电极和第二电极之间的有源区，其中有源区的至少一部分包括可弹性变形的材料，并且其中弹性变形 可变形材料使得所述存储元件从较低的导电状态变为较高的导电状态。 还提供了一种多层结构，其包括设置在基底之上的基底和多层电路，其中多层电路至少包括包括可弹性变形的材料的存储元件。
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公开(公告)号：US08586959B2
公开(公告)日：2013-11-19
申请号：US12769557
申请日：2010-04-28
Applicant: Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
Inventor： Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
IPC: H01L47/00
CPC classification number: H01L45/146 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/72 , G11C2213/77 , H01L27/2409
Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
Abstract translation: 忆阻开关装置可以包括形成在第一电极和第二电极之间的开关，其中开关包括忆阻层和与忆阻层直接相邻的选择层。 选择层通过施加在第一和第二电极之间的亚阈值电压的对称双极性范围阻挡电流到忆阻层。
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Patent Agency Ranking
公开(公告)号：US20110228593A1
公开(公告)日：2011-09-22
申请号：US13130820
申请日：2009-01-05
Applicant: Dmitri Strukov
Inventor： Dmitri Strukov
CPC classification number: H01L27/10 , B82Y10/00 , G11C11/34 , G11C13/0002 , G11C2213/15 , G11C2213/33 , G11C2213/77 , G11C2213/81
Abstract: A memristive device (200) includes a first electrode (104); a second electrode (102); a junction (106) between the first electrode (104) and the second electrode (102), the junction (106) including a semiconductor matrix (230) and particles (240) embedded in the semiconductor matrix (230), the particles (240) being configured to hold a selectable level of electrical charge, the electrical charge controlling the amount of current flowing through the junction (106) for a given reading voltage. A method for using a memristive device (200) includes: applying a first voltage across a memristive junction (106), the memristive junction (106) including a semiconductor matrix (230) and particles (240) embedded in the semiconductor matrix (230); electrical charges introduced into the semiconductor matrix (230) by the first programming voltage being trapped within the particles (240); applying a reading voltage across the memristive junction (106); and measuring a current across the junction (106), the current being reduced proportionally to the electrical charges trapped within the potential wells, the current being used to determine a state of the junction (106).
Abstract translation: 忆阻器（200）包括第一电极（104）; 第二电极（102）; 在第一电极（104）和第二电极（102）之间的结（106），结（106）包括半导体矩阵（230）和嵌入在半导体矩阵（230）中的颗粒（240） ）被配置为保持可选择的电荷电平，所述电荷控制在给定读取电压下流过所述结（106）的电流量。 一种使用忆阻器件（200）的方法包括：跨越忆阻接头（106）施加第一电压，所述忆阻接头（106）包括半导体矩阵（230）和嵌入在半导体矩阵（230）中的颗粒（240） ; 由第一编程电压引入半导体矩阵（230）的电荷被捕获在颗粒（240）内; 在忆阻结（106）上施加读取电压; 并且测量跨越所述结（106）的电流，所述电流与被俘获在所述势阱内的电荷成比例地减小，所述电流用于确定所述结（106）的状态。
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公开(公告)号：US20110051310A1
公开(公告)日：2011-03-03
申请号：US12548124
申请日：2009-08-26
Applicant: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
Inventor： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
Abstract: A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
Abstract translation: 电容器件包括具有第一端和第二端的第一电极和第二电极。 该器件具有介于第一电极和第二电极之间的存储电容矩阵。 存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。 所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输 在第一电极和第二电极上施加编程电压。
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公开(公告)号：US08891283B2
公开(公告)日：2014-11-18
申请号：US13130820
申请日：2009-01-05
Applicant: Dmitri Strukov
Inventor： Dmitri Strukov
CPC classification number: H01L27/10 , B82Y10/00 , G11C11/34 , G11C13/0002 , G11C2213/15 , G11C2213/33 , G11C2213/77 , G11C2213/81
Abstract: A memristive device includes a first electrode; a second electrode; a junction between the first electrode and the second electrode, the junction including a semiconductor matrix and particles embedded in the semiconductor matrix, the particles being configured to hold a selectable level of electrical charge, the electrical charge controlling the amount of current flowing through the junction for a given reading voltage. A method for using a memristive device includes: applying a first voltage across a memristive junction, the memristive junction including a semiconductor matrix and particles embedded in the semiconductor matrix; electrical charges introduced into the semiconductor matrix by the first programming voltage being trapped within the particles; applying a reading voltage across the memristive junction; and measuring a current across the junction, the current being reduced proportionally to the electrical charges trapped within the potential wells, the current being used to determine a state of the junction.
Abstract translation: 忆阻器包括第一电极; 第二电极; 所述第一电极和所述第二电极之间的接合点，所述接合部包括半导体矩阵和嵌入在所述半导体矩阵中的颗粒，所述粒子被配置为保持可选择的电荷水平，所述电荷控制流过所述结的电流量 对于给定的读取电压。 使用忆阻器件的方法包括：跨越忆阻接头施加第一电压，所述忆阻接点包括半导体矩阵和嵌入在所述半导体矩阵中的微粒; 通过第一编程电压引入到半导体矩阵中的电荷被捕获在颗粒内; 在忆阻连接处施加读数电压; 并且测量跨越结的电流，电流与被捕获在势阱内的电荷成比例地减小，该电流用于确定结的状态。
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公开(公告)号：US08493138B2
公开(公告)日：2013-07-23
申请号：US12548124
申请日：2009-08-26
Applicant: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
Inventor： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
IPC: G11C11/00
Abstract: A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
Abstract translation: 电容器件包括具有第一端和第二端的第一电极和第二电极。 该器件具有介于第一电极和第二电极之间的存储电容矩阵。 存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。 所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输 在第一电极和第二电极上施加编程电压。
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公开(公告)号：US20110186801A1
公开(公告)日：2011-08-04
申请号：US12696524
申请日：2010-01-29
Applicant: Jianhua Yang , Dmitri Strukov , Wei Wu
Inventor： Jianhua Yang , Dmitri Strukov , Wei Wu
CPC classification number: H01L27/24 , G11C11/419 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2213/52 , H01L27/11206 , H01L27/115 , H01L27/118 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148
Abstract: A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical held. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.
Abstract translation: 纳米级开关器件具有含有能够携带多种掺杂剂并在电气保持下输送掺杂剂的开关材料的有源区域。 开关器件具有纳米级宽度的第一，第二和第三电极。 有源区设置在第一和第二电极之间。 具有非线性电压依赖性电阻的电阻修饰层设置在第二和第三电极之间。
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