发明申请
- 专利标题: CONTENT ADDRESSABLE MEMORY ARRAY WRITING
- 专利标题(中): 内容可寻址存储阵列写
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申请号: US12549761申请日: 2009-08-28
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公开(公告)号: US20110051485A1公开(公告)日: 2011-03-03
- 发明人: Leland Chang , Gary S. Ditlow , Brian L. Ji , Robert K. Montoye
- 申请人: Leland Chang , Gary S. Ditlow , Brian L. Ji , Robert K. Montoye
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C15/00
- IPC分类号: G11C15/00 ; G11C7/00 ; G11C11/00
摘要:
A memory system for storing one or more addresses includes a transposable memory having word lines, bit lines, transposed word lines and transposed bit lines and that receives and stores an input array having dimensions M by N and a content addressable memory (CAM) that reads the transposed word lines of the transposable memory to form input words and that stores the input words in an N by M array.
公开/授权文献
- US3083600A Commutator smoothing device 公开/授权日:1963-04-02
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