发明申请
US20110053356A1 GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD
有权
在具有淋浴的PECVD系统中通过反扩散实现的气体混合方法
- 专利标题: GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD
- 专利标题(中): 在具有淋浴的PECVD系统中通过反扩散实现的气体混合方法
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申请号: US12553007申请日: 2009-09-02
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公开(公告)号: US20110053356A1公开(公告)日: 2011-03-03
- 发明人: Xiesen Yang , Yong-Kee Chae , Shuran Sheng , Liwei Li
- 申请人: Xiesen Yang , Yong-Kee Chae , Shuran Sheng , Liwei Li
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS,INC.
- 当前专利权人: APPLIED MATERIALS,INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
摘要:
Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.