Invention Application
US20110057247A1 FIN-FET Non-Volatile Memory Cell, And An Array And Method Of Manufacturing
有权
FIN-FET非易失性存储器单元，以及阵列和制造方法
- Patent Title: FIN-FET Non-Volatile Memory Cell, And An Array And Method Of Manufacturing
- Patent Title (中): FIN-FET非易失性存储器单元，以及阵列和制造方法
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Application No.: US12555756Application Date: 2009-09-08
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Publication No.: US20110057247A1Publication Date: 2011-03-10
- Inventor: Yaw Wen Hu , Prateep Tuntasood
- Applicant: Yaw Wen Hu , Prateep Tuntasood
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A non-volatile memory cell has a substrate layer with a fin shaped semiconductor member of a first conductivity type on the substrate layer. The fin shaped member has a first region of a second conductivity type and a second region of the second conductivity type, spaced apart from the first region with a channel region extending between the first region and the second region. The fin shaped member has a top surface and two side surfaces between the first region and the second region. A word line is adjacent to the first region and is capacitively coupled to the top surface and the two side surfaces of a first portion of the channel region. A floating gate is adjacent to the word line and is insulated from the top surface and is capacitively coupled to the two side surfaces of a second portion of the channel region. A coupling gate is capacitively coupled to the floating gate. An erase gate is insulated from the second region and is adjacent to the floating gate and coupling gate.
Public/Granted literature
- US08461640B2 FIN-FET non-volatile memory cell, and an array and method of manufacturing Public/Granted day:2013-06-11
Information query
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