Invention Application
- Patent Title: Stable surface wave plasma source
- Patent Title (中): 稳定的表面波等离子体源
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Application No.: US12555080Application Date: 2009-09-08
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Publication No.: US20110057562A1Publication Date: 2011-03-10
- Inventor: Lee CHEN , Jianping ZHAO , Ronald V. BRAVENEC , Merritt FUNK
- Applicant: Lee CHEN , Jianping ZHAO , Ronald V. BRAVENEC , Merritt FUNK
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Main IPC: H05H1/26
- IPC: H05H1/26 ; H01P3/00

Abstract:
A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
Public/Granted literature
- US08415884B2 Stable surface wave plasma source Public/Granted day:2013-04-09
Information query
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