发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12953347申请日： 2010-11-23
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公开(公告)号： US20110062500A1公开(公告)日： 2011-03-17
- 发明人: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
- 申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
- 申请人地址： TW Hsinchu
- 专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 优先权： TWTW97110055 20080321
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.
公开/授权文献
- US08063439B2 Semiconductor device and fabrication method thereof 公开/授权日：2011-11-22
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