发明申请
- 专利标题： METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- 专利标题（中）： 用于制造具有薄型通道的晶体管的方法
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申请号： US12949696申请日： 2010-11-18
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公开(公告)号： US20110062520A1公开(公告)日： 2011-03-17
- 发明人: Justin K. Brask , Robert S. Chau , Suman Datta , Mark L. Doczy , Brian S. Doyle , Jack T. Kavalieros , Amlan Majumdar , Matthew V. Metz , Marko Radosavljevic
- 申请人： Justin K. Brask , Robert S. Chau , Suman Datta , Mark L. Doczy , Brian S. Doyle , Jack T. Kavalieros , Amlan Majumdar , Matthew V. Metz , Marko Radosavljevic
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.
公开/授权文献
- US09337307B2 Method for fabricating transistor with thinned channel 公开/授权日：2016-05-10
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