发明申请
US20110065030A1 MASK PATTERN DETERMINING METHOD, MASK MANUFACTURING METHOD, AND DEVICE MANUFACTURING METHOD
审中-公开
掩模图形测定方法，掩模制造方法及装置制造方法
- 专利标题： MASK PATTERN DETERMINING METHOD, MASK MANUFACTURING METHOD, AND DEVICE MANUFACTURING METHOD
- 专利标题（中）： 掩模图形测定方法，掩模制造方法及装置制造方法
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申请号： US12880507申请日： 2010-09-13
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公开(公告)号： US20110065030A1公开(公告)日： 2011-03-17
- 发明人: Toshiya KOTANI , Fumiharu Nakajima , Ryota Aburada , Takafumi Taguchi , Hiromitsu Mashita , Michiya Takimoto , Chikaaki Kodama
- 申请人： Toshiya KOTANI , Fumiharu Nakajima , Ryota Aburada , Takafumi Taguchi , Hiromitsu Mashita , Michiya Takimoto , Chikaaki Kodama
- 优先权： JP2009-216106 20090917
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G06F17/50
摘要：
According to one embodiment, a mask pattern determining method includes a mask-pattern dimension variation amount of a first photomask is derived. Moreover, a correspondence relationship between a target dimension value of an on-substrate test pattern formed by using a second photomask and a dimension allowable variation amount of a mask pattern formed on the second photomask is derived. Then, it is determined whether pattern formation is possible with a pattern dimension that needs to be formed when performing the pattern formation on a substrate by using the first photomask based on the mask-pattern dimension variation amount and the correspondence relationship.
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