发明申请
US20110065287A1 PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS
审中-公开
含金属薄膜的脉冲化学气相沉积
- 专利标题: PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS
- 专利标题(中): 含金属薄膜的脉冲化学气相沉积
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申请号: US12557771申请日: 2009-09-11
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公开(公告)号: US20110065287A1公开(公告)日: 2011-03-17
- 发明人: Cory Wajda
- 申请人: Cory Wajda
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L21/314
- IPC分类号: H01L21/314
摘要:
A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by thermal decomposition of a metal-containing gas and a silicon-containing gas on the substrate, exposing the substrate to a continuous flow of the metal-containing gas, and during the continuous flow, exposing the substrate to sequential pulses of the silicon-containing gas.