发明申请
US20110068378A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH
有权
半导体器件和形成具有减小宽度扩散区域的半导体器件的方法
- 专利标题： SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH
- 专利标题（中）： 半导体器件和形成具有减小宽度扩散区域的半导体器件的方法
-
申请号： US12562635申请日： 2009-09-18
-
公开(公告)号： US20110068378A1公开(公告)日： 2011-03-24
- 发明人: Lequn Liu , Yongjun Jeff Hu , Anish A. Khandekar
- 申请人： Lequn Liu , Yongjun Jeff Hu , Anish A. Khandekar
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of at the one or more diffusion regions being less than about 40% greater than the first width.
公开/授权文献
信息查询
IPC分类:
