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    Methods of forming semiconductor devices having diffusion regions of reduced width
    1.
    发明授权
    Methods of forming semiconductor devices having diffusion regions of reduced width 有权
    形成具有减小宽度的扩散区域的半导体器件的方法

    公开(公告)号：US08709929B2

    公开(公告)日：2014-04-29

    申请号：US13604411

    申请日：2012-09-05

    申请人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    发明人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    IPC分类号： H01L21/265 ,  H01L29/78

    CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L27/11526 ,  H01L27/11548 ,  H01L29/6659 ,  H01L29/66659

    摘要： Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion regions in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.

    摘要翻译： 提供了用于形成半导体器件的半导体器件和方法，包括在半导体中包括一个或多个扩散区域的半导体器件，所述一个或多个扩散区域与邻近半导体表面形成的栅极相邻（例如，半导体衬底 ）。 一个或多个扩散区域包括在半导体表面下方的深度处的第一宽度和靠近半导体表面的第二宽度，一个或多个扩散区域的第二宽度小于第一宽度的大约40％ 宽度。

    METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH
    2.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH 有权
    形成具有减小宽度扩散区域的半导体器件的方法

    公开(公告)号：US20120329258A1

    公开(公告)日：2012-12-27

    申请号：US13604411

    申请日：2012-09-05

    申请人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    发明人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    IPC分类号： H01L21/265

    CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L27/11526 ,  H01L27/11548 ,  H01L29/6659 ,  H01L29/66659

    摘要： Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.

    摘要翻译： 提供了用于形成半导体器件的半导体器件和方法，包括在半导体中包括一个或多个扩散区的半导体器件，所述一个或多个扩散区与邻近半导体表面形成的栅极（例如，半导体衬底 ）。 一个或多个扩散区域包括在半导体表面下方的深度处的第一宽度和靠近半导体表面的第二宽度，一个或多个扩散区域的第二宽度小于第一宽度的大约40％ 宽度。

    Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
    3.
    发明授权
    Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width 有权
    形成半导体器件的半导体器件和方法，该半导体器件具有减小宽度的扩散区域

    公开(公告)号：US08283708B2

    公开(公告)日：2012-10-09

    申请号：US12562635

    申请日：2009-09-18

    申请人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    发明人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L27/11526 ,  H01L27/11548 ,  H01L29/6659 ,  H01L29/66659

    摘要： Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.

    摘要翻译： 提供了用于形成半导体器件的半导体器件和方法，包括在半导体中包括一个或多个扩散区的半导体器件，所述一个或多个扩散区与邻近半导体表面形成的栅极（例如，半导体衬底 ）。 一个或多个扩散区域包括在半导体表面下方的深度处的第一宽度和靠近半导体表面的第二宽度，一个或多个扩散区域的第二宽度小于第一宽度的大约40％ 宽度。

    SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH
    4.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH 有权
    半导体器件和形成具有减小宽度扩散区域的半导体器件的方法

    公开(公告)号：US20110068378A1

    公开(公告)日：2011-03-24

    申请号：US12562635

    申请日：2009-09-18

    申请人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    发明人： Lequn Liu ,  Yongjun Jeff Hu ,  Anish A. Khandekar

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L27/11526 ,  H01L27/11548 ,  H01L29/6659 ,  H01L29/66659

    摘要： Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of at the one or more diffusion regions being less than about 40% greater than the first width.

    摘要翻译： 提供了用于形成半导体器件的半导体器件和方法，包括在半导体中包括一个或多个扩散区的半导体器件，所述一个或多个扩散区与邻近半导体表面形成的栅极（例如，半导体衬底 ）。 一个或多个扩散区域包括在半导体表面下方的深度处的第一宽度和靠近半导体表面的第二宽度，在一个或多个扩散区域处的第二宽度小于大约40％ 第一宽