发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12954877申请日： 2010-11-28
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公开(公告)号： US20110068392A1公开(公告)日： 2011-03-24
- 发明人: HITOSHI MATSUURA , Yoshito Nakazawa , Tsuyoshi Kachi , Yuji Yatsuda
- 申请人： HITOSHI MATSUURA , Yoshito Nakazawa , Tsuyoshi Kachi , Yuji Yatsuda
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 优先权： JP2006-216659 20060809
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.
公开/授权文献
- US07968939B2 Semiconductor device and method of manufacturing the same 公开/授权日：2011-06-28
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