发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12881415申请日： 2010-09-14
-
公开(公告)号： US20110068401A1公开(公告)日： 2011-03-24
- 发明人: Takashi Izumida , Nobutoshi Aoki , Masaki Kondo , Yoshiaki Asao , Satoshi Inaba
- 申请人： Takashi Izumida , Nobutoshi Aoki , Masaki Kondo , Yoshiaki Asao , Satoshi Inaba
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-219660 20090924
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/84
摘要：
A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region in which an impurity concentration of lower portions of side surfaces facing each other in sides forming the first distance is higher than an impurity concentration of lower portions of side surfaces facing each other in sides forming the second distance.
信息查询
IPC分类:
