发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件及制造半导体器件的方法
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申请号： US12955525申请日： 2010-11-29
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公开(公告)号： US20110068471A1公开(公告)日： 2011-03-24
- 发明人: Shirou Ozaki , Yoshihiro Nakata , Yasushi Kobayashi , Yuichi Minoura
- 申请人： Shirou Ozaki , Yoshihiro Nakata , Yasushi Kobayashi , Yuichi Minoura
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768
摘要：
The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.
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