发明申请
- 专利标题: SEMICONDUCTOR OUTLIER IDENTIFICATION USING SERIALLY-COMBINED DATA TRANSFORM PROCESSING METHODOLOGIES
- 专利标题(中): 使用串联组合数据变换处理方法的半导体外延识别
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申请号: US12566387申请日: 2009-09-24
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公开(公告)号: US20110071782A1公开(公告)日: 2011-03-24
- 发明人: AMIT V. NAHAR , JOHN M. CARULLI, JR. , KENNETH M. BUTLER , THOMAS J. ANDERSON , SURESH SUBRAMANIAM
- 申请人: AMIT V. NAHAR , JOHN M. CARULLI, JR. , KENNETH M. BUTLER , THOMAS J. ANDERSON , SURESH SUBRAMANIAM
- 申请人地址: US TX DALLAS
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX DALLAS
- 主分类号: G06F19/00
- IPC分类号: G06F19/00 ; G01N37/00 ; G06F17/18
摘要:
A method for identifying outlier semiconductor devices from a plurality of semiconductor devices includes performing at least one electrical test to obtain electrical test data including at least one test parameter, applying at least a first data transform processing methodology to the electrical test data to generate processed test data, and applying a second data transform processing methodology that is different from the first data transform processing methodology to process the processed test data. The second data transform processing methodology applies an outlier test limit to identify non-outlier devices that comprise semiconductor devices from the semiconductor devices that conform to the outlier test limit and outlier devices that do not conform to the outlier test limit. The semiconductor devices are dispositioned using the outlier identification results. At least one of the data transform processing methodologies can include statistics.
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