发明申请
US20110072200A1 Novel NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface
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新型基于NAND的混合NVM设计,将NAND和NOR集成在1模并行接口中
- 专利标题: Novel NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface
- 专利标题(中): 新型基于NAND的混合NVM设计,将NAND和NOR集成在1模并行接口中
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申请号: US12807996申请日: 2010-09-17
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公开(公告)号: US20110072200A1公开(公告)日: 2011-03-24
- 发明人: Peter W. Lee , Fu-Chang Hsu , Kesheng Wang
- 申请人: Peter W. Lee , Fu-Chang Hsu , Kesheng Wang
- 专利权人: Aplus Flash Technology, Inc.
- 当前专利权人: Aplus Flash Technology, Inc.
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G11C16/06
摘要:
A nonvolatile memory device includes multiple independent nonvolatile memory arrays that concurrently for parallel reading and writing the nonvolatile memory arrays. A parallel interface communicates commands, address, device status, and data between a master device and nonvolatile memory arrays for concurrently reading and writing of the nonvolatile memory arrays and sub-arrays. Data is transferred on the parallel interface at the rising edge and the falling edge of the synchronizing clock. The parallel interface transmits a command code and an address code from a master device and transfers a data code between the master device and the nonvolatile memory device, wherein the data code has a length that is determined by the command code and a location determined by the address code. Reading one nonvolatile memory array may be interrupted for reading another. One reading operation has two sub-addresses with one transferred prior to a command.
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