Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE
- Patent Title (中): 集成电路装置及制造集成电路装置的方法
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Application No.: US12902642Application Date: 2010-10-12
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Publication No.: US20110073861A1Publication Date: 2011-03-31
- Inventor: Daiki YAMADA , Yoshitaka DOZEN , Eiji SUGIYAMA , Hidekazu TAKAHASHI
- Applicant: Daiki YAMADA , Yoshitaka DOZEN , Eiji SUGIYAMA , Hidekazu TAKAHASHI
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2005-161413 20050601
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
Public/Granted literature
- US08120034B2 Integrated circuit device and method for manufacturing integrated circuit device Public/Granted day:2012-02-21
Information query
IPC分类:
