- 专利标题： Laminated thin-film device, manufacturing method thereof, and circuit
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申请号： US12926733申请日： 2010-12-07
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公开(公告)号： US20110073993A1公开(公告)日： 2011-03-31
- 发明人: John David Baniecki , Takeshi Shioga , Kazuaki Kurihara
- 申请人： John David Baniecki , Takeshi Shioga , Kazuaki Kurihara
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2002-181463 20020621
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
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