发明申请
- 专利标题： Process to fabricate bottom electrode for MRAM device
- 专利标题（中）： 制造MRAM器件底电极的工艺
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申请号： US12927615申请日： 2010-11-19
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公开(公告)号： US20110076785A1公开(公告)日： 2011-03-31
- 发明人: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- 申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
公开/授权文献
- US08273666B2 Process to fabricate bottom electrode for MRAM device 公开/授权日：2012-09-25
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