发明申请
US20110076827A1 MEMORY DEVICES HAVING ELECTRODES COMPRISING NANOWIRES, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME
有权
具有包含纳米线的电极的存储器件，包括其的系统及其形成方法
- 专利标题： MEMORY DEVICES HAVING ELECTRODES COMPRISING NANOWIRES, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME
- 专利标题（中）： 具有包含纳米线的电极的存储器件，包括其的系统及其形成方法
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申请号： US12960123申请日： 2010-12-03
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公开(公告)号： US20110076827A1公开(公告)日： 2011-03-31
- 发明人: Jun Liu , Michael P. Violette
- 申请人： Jun Liu , Michael P. Violette
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; B82Y99/00
摘要：
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
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