发明申请
US20110079839A1 Non-Volatile Memory Devices Having Reduced Susceptibility to Leakage of Stored Charges and Methods of Forming Same
审中-公开
具有降低存储容量泄漏的易感性的非易失性存储器件及其形成方法
- 专利标题: Non-Volatile Memory Devices Having Reduced Susceptibility to Leakage of Stored Charges and Methods of Forming Same
- 专利标题(中): 具有降低存储容量泄漏的易感性的非易失性存储器件及其形成方法
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申请号: US12894863申请日: 2010-09-30
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公开(公告)号: US20110079839A1公开(公告)日: 2011-04-07
- 发明人: Fayrushin Albert , Kwang Soo Seol , Jaeduk Lee
- 申请人: Fayrushin Albert , Kwang Soo Seol , Jaeduk Lee
- 优先权: KR10-2009-0093315 20090930
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
Provided is a semiconductor device. The semiconductor device includes a substrate, a tunnel insulating layer, a charge storage pattern, a blocking layer, a gate electrode. The tunnel insulating layer is disposed over the substrate. The charge storage pattern is disposed over the tunnel insulating layer. The charge storage pattern has an upper surface, a sidewall, and an edge portion between the upper surface and the sidewall. The blocking layer includes an insulating pattern covering the edge portion of the charge storage pattern, and a gate dielectric layer covering the upper surface, the sidewall, and the edge portion of the charge storage pattern. The gate electrode is disposed over the blocking layer, the gate electrode covering the upper surface, the sidewall, and the edge portion of the charge storage pattern.