公开(公告)号：US20110079839A1

公开(公告)日：2011-04-07

申请号：US12894863

申请日：2010-09-30

申请人： Fayrushin Albert ,  Kwang Soo Seol ,  Jaeduk Lee

发明人： Fayrushin Albert ,  Kwang Soo Seol ,  Jaeduk Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/4234 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/792

摘要： Provided is a semiconductor device. The semiconductor device includes a substrate, a tunnel insulating layer, a charge storage pattern, a blocking layer, a gate electrode. The tunnel insulating layer is disposed over the substrate. The charge storage pattern is disposed over the tunnel insulating layer. The charge storage pattern has an upper surface, a sidewall, and an edge portion between the upper surface and the sidewall. The blocking layer includes an insulating pattern covering the edge portion of the charge storage pattern, and a gate dielectric layer covering the upper surface, the sidewall, and the edge portion of the charge storage pattern. The gate electrode is disposed over the blocking layer, the gate electrode covering the upper surface, the sidewall, and the edge portion of the charge storage pattern.

摘要翻译： 提供一种半导体器件。 半导体器件包括衬底，隧道绝缘层，电荷存储图案，阻挡层，栅电极。 隧道绝缘层设置在衬底上。 电荷存储图案设置在隧道绝缘层上。 电荷存储图案具有在上表面和侧壁之间的上表面，侧壁和边缘部分。 阻挡层包括覆盖电荷存储图案的边缘部分的绝缘图案，以及覆盖电荷存储图案的上表面，侧壁和边缘部分的栅极电介质层。 栅电极设置在阻挡层上，栅电极覆盖电荷存储图案的上表面，侧壁和边缘部分。