发明申请
- 专利标题： Hydrogen Passivation of Integrated Circuits
- 专利标题（中）： 集成电路的氢钝化
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申请号： US12890137申请日： 2010-09-24
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公开(公告)号： US20110079884A1公开(公告)日： 2011-04-07
- 发明人: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人： Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/768 ; H01L21/31
摘要：
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.
公开/授权文献
- US08669644B2 Hydrogen passivation of integrated circuits 公开/授权日：2014-03-11
信息查询
IPC分类:
