发明申请
- 专利标题: INTEGRATED CIRCUIT WITH PROTECTIVE STRUCTURE, AND METHOD OF FABRICATING THE INTEGRATED CIRCUIT
- 专利标题(中): 具有保护结构的集成电路,以及整合电路的制作方法
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申请号: US12575078申请日: 2009-10-07
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公开(公告)号: US20110079922A1公开(公告)日: 2011-04-07
- 发明人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping WEI
- 申请人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping WEI
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/768
摘要:
A structure includes a semiconductor substrate having semiconductor devices formed on or in the substrate. An interconnecting metallization structure is formed over and connected to the devices. The interconnecting metallization structure including at least one dielectric layer. A passivation layer is deposited over the interconnecting metallization structure and the dielectric layer. At least one metal contact pad and at least one dummy metal structure are provided in the passivation layer. The contact pad is conductively coupled to at least one of the devices. The dummy metal structure is spaced apart from the contact pad and unconnected to the contact pad and the devices.
公开/授权文献
- US08030776B2 Integrated circuit with protective structure 公开/授权日:2011-10-04