发明申请
- 专利标题: MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件的制造方法
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申请号: US12896391申请日: 2010-10-01
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公开(公告)号: US20110081753A1公开(公告)日: 2011-04-07
- 发明人: Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
- 申请人: Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 优先权: JP2009-229225 20091001
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
公开/授权文献
- US07989283B2 Manufacturing method of semiconductor device 公开/授权日:2011-08-02