公开(公告)号：US07989283B2

公开(公告)日：2011-08-02

申请号：US12896391

申请日：2010-10-01

申请人： Shinichi Yamanari ,  Ryoichi Yoshifuku ,  Masaaki Shinohara ,  Takahiro Maruyama ,  Kenji Kawai ,  Yusaku Hirota

发明人： Shinichi Yamanari ,  Ryoichi Yoshifuku ,  Masaaki Shinohara ,  Takahiro Maruyama ,  Kenji Kawai ,  Yusaku Hirota

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/823462 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.

摘要翻译： 提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。 作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。 作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MI​​SFET的高介电常数栅极绝缘体。 然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。 此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。 此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

公开(公告)号：US20100330794A1

公开(公告)日：2010-12-30

申请号：US12819675

申请日：2010-06-21

申请人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

发明人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

IPC分类号： H01L21/28 ,  H01L21/306

CPC分类号： H01L21/02063 ,  H01L21/28518 ,  H01L21/76831 ,  H01L21/76895

摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.

摘要翻译： 提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。 一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

公开(公告)号：US20070141849A1

公开(公告)日：2007-06-21

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/00 ,  B41J2/05 ,  H01L21/302

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

公开(公告)号：US20110081753A1

公开(公告)日：2011-04-07

申请号：US12896391

申请日：2010-10-01

申请人： Shinichi YAMANARI ,  Ryoichi Yoshifuku ,  Masaaki Shinohara ,  Takahiro Maruyama ,  Kenji Kawai ,  Yusaku Hirota

发明人： Shinichi YAMANARI ,  Ryoichi Yoshifuku ,  Masaaki Shinohara ,  Takahiro Maruyama ,  Kenji Kawai ,  Yusaku Hirota

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/823462 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.

摘要翻译： 提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。 作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。 作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MI​​SFET的高介电常数栅极绝缘体。 然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。 此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。 此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

公开(公告)号：US08037891B2

公开(公告)日：2011-10-18

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

公开(公告)号：US20090137118A1

公开(公告)日：2009-05-28

申请号：US12248450

申请日：2008-10-09

申请人： Yusaku Hirota ,  Itaru Kanno

发明人： Yusaku Hirota ,  Itaru Kanno

IPC分类号： H01L21/306 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/67086 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76832 ,  H01L21/76834

摘要： Initially, an interconnection 5w that contains copper is formed on a semiconductor substrate 1 (step (A)). On the interconnection 5w, an etching stopper film 6es is formed (step (B)). On the etching stopper film 6es, an insulating layer 6 is formed (step (C)). In the insulating layer 6, a via hole 6v that reaches the etching stopper film 6es is formed (step (D)). A surface of each of via hole 6v and the insulating layer 6 is cleaned with an organic solvent C (step (E)). The etching stopper film 6es is removed such that the interconnection 5w is exposed (step (F)). An interconnection 6w that electrically connects to the exposed interconnection 5w is further formed (step (G)). It is thereby possible to obtain a method of manufacturing a semiconductor device, including a cleaning step that can suppress corrosion of an interconnection that contains copper.

摘要翻译： 首先，在半导体基板1上形成包含铜的布线5w（步骤（A））。 在互连件5w上形成蚀刻停止膜6es（步骤（B））。 在蚀刻停止膜6es上形成绝缘层6（步骤（C））。 在绝缘层6中，形成到达蚀刻停止膜6es的通孔6v（步骤（D））。 通孔6v和绝缘层6的表面用有机溶剂C清洗（步骤（E））。 去除蚀刻停止膜6es，使得互连5w露出（步骤（F））。 进一步形成与露出的布线5w电连接的布线6w（步骤（G））。 从而可以获得一种制造半导体器件的方法，包括可以抑制含有铜的互连的腐蚀的清洗步骤。

公开(公告)号：US20090014028A1

公开(公告)日：2009-01-15

申请号：US12170823

申请日：2008-07-10

申请人： Yusaku Hirota ,  Itaru Kanno ,  Hiroshi Morita ,  Junichi Ida

发明人： Yusaku Hirota ,  Itaru Kanno ,  Hiroshi Morita ,  Junichi Ida

IPC分类号： B08B3/10 ,  B08B3/12 ,  B08B3/08

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.

摘要翻译： 提供了一种有效地清洁基板而不损害其上形成的精细图案的方法。 它是通过一次浸渍一个或多个基材来清洗一个或多个基材作为一个批次的系统中的一个或多个基材的方法，包括以下步骤：将一个或多个基材作为一批在一个湿蚀刻溶液中浸渍; 超声波清洗一个或多个基材作为一批; 并将一个或多个基材作为一批干燥。 超声波清洗的步骤使用溶解有气体的清洗液在大气压下具有60〜100％的饱和度，超声波的频率至少为500kHz，能量为0.02W / cm2〜0.5W / cm 2。