Cross point memory arrays with CBRAM and RRAM stacks are presented. A cross point memory array includes a first group of substantially parallel conductive lines and a second group of substantially parallel conductive lines, oriented substantially perpendicular to the first group of substantially parallel conductive lines. An array of memory stack is located at the intersections of the first group of substantially parallel conductive lines and the second group of substantially parallel conductive lines, wherein each memory stack comprises a conductive bridge memory element in series with a resistive-switching memory element.