发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12904680申请日： 2010-10-14
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公开(公告)号： US20110084384A1公开(公告)日： 2011-04-14
- 发明人: Kenji SAKATA , Tsuyoshi KIDA
- 申请人： Kenji SAKATA , Tsuyoshi KIDA
- 申请人地址： JP Kawasaki-shi
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2009-237128 20091014
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/50
摘要：
A semiconductor device includes a substrate, a semiconductor chip that is bonded to one of the faces of the substrate via bumps, and has a device formation face facing the one of the faces, and a resin that fills the space between the device formation face of the semiconductor chip and the one of the faces of the substrate. The resin includes: a first resin that is formed in a formation region of bumps placed on the outermost circumference of the bumps, and is formed inside the formation region, and a second resin that is formed outside the first resin. The thermal expansion coefficient of the substrate is higher than the thermal expansion coefficient of the first resin. The thermal expansion coefficient of the second resin is higher than the thermal expansion coefficient of the first resin.
公开/授权文献
- US08710651B2 Semiconductor device and method for manufacturing the same 公开/授权日：2014-04-29
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