发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12977573申请日： 2010-12-23
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公开(公告)号： US20110092037A1公开(公告)日： 2011-04-21
- 发明人: Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
- 申请人： Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
- 申请人地址： JP Kanagawa
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2004-313358(P) 20041028; JP2005-249333(P) 20050830
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
公开/授权文献
- US08084343B2 Semiconductor device 公开/授权日：2011-12-27
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