发明申请
US20110092041A1 Phase Change Memory with Diodes Embedded in Substrate 审中-公开
相变存储器,二极管嵌入基板

Phase Change Memory with Diodes Embedded in Substrate
摘要:
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.
公开/授权文献
信息查询
0/0