发明申请
- 专利标题: Phase Change Memory with Diodes Embedded in Substrate
- 专利标题(中): 相变存储器,二极管嵌入基板
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申请号: US12969342申请日: 2010-12-15
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公开(公告)号: US20110092041A1公开(公告)日: 2011-04-21
- 发明人: Fang-Shi Jordan Lai , ChiaHua Ho , Fu-Liang Yang
- 申请人: Fang-Shi Jordan Lai , ChiaHua Ho , Fu-Liang Yang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.
公开/授权文献
- US09276209B2 Phase change memory with diodes embedded in substrate 公开/授权日:2016-03-01
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