发明申请
US20110095188A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY 有权
具有改进的红外灵敏度的背面照明成像传感器

BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY
摘要:
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
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